IRFB4020PBF MOSFET Transistor

The IRFB4020PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB4020PBF transistor as follows.

IRFB4020PBF Transistor Specification

Transistor Code		IRFB4020PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		91pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		4.9V
Total Gate Charge		18nC

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