IRFB4110GPBF MOSFET Transistor

The IRFB4110GPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFB4110GPBF transistor as follows.

IRFB4110GPBF Transistor Specification

Transistor Code		IRFB4110GPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	370W
Drain-Source Capacitance		670pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		67nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		150nC

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