SIHLZ24 MOSFET Transistor

The SIHLZ24 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHLZ24 transistor as follows.

SIHLZ24 Transistor Specification

Transistor Code		SIHLZ24
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		360pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		110nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		18nC

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