IRF9335PBF MOSFET Transistor

The IRF9335PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF9335PBF transistor as follows.

IRF9335PBF Transistor Specification

Transistor Code		IRF9335PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.059Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		94pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		2.4V
Total Gate Charge		4.7nC

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