IRF8513PBF MOSFET Transistor

The IRF8513PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF8513PBF transistor as follows.

IRF8513PBF Transistor Specification

Transistor Code		IRF8513PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0155Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		172pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		8.5nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		5.7nC

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