IRF7452QPBF MOSFET Transistor

The IRF7452QPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7452QPBF transistor as follows.

IRF7452QPBF Transistor Specification

Transistor Code		IRF7452QPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		33nC

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