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IRF7769L1 MOSFET Transistor

The IRF7769L1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7769L1 transistor as follows.

Circuit diagram symbol of the IRF7769L1 transistor

IRF7769L1 Transistor Specification

Transistor Code IRF7769L1
Transistor Type MOSFET
Control Channel Type N-Channel
Package DIRECTFET
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0035Ohm
Power Dissipation (Maximum) PD 3.3W
Drain-Source Capacitance 1240pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 32nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 200nC

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