IRF6802SD MOSFET Transistor

The IRF6802SD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6802SD transistor as follows.

IRF6802SD Transistor Specification

Transistor Code		IRF6802SD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0042Ohm
Power Dissipation (Maximum)	PD	1.7W
Drain-Source Capacitance		400pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		2.1V
Total Gate Charge		8.8nC

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