IRF7701G MOSFET Transistor

The IRF7701G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7701G transistor as follows.

IRF7701G Transistor Specification

Transistor Code		IRF7701G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP8
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	1.5W

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