IRF7322D1PBF MOSFET Transistor

The IRF7322D1PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7322D1PBF transistor as follows.

IRF7322D1PBF Transistor Specification

Transistor Code		IRF7322D1PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.062Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		470pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		0.7V
Total Gate Charge		19nC

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