IRF7171M MOSFET Transistor

The IRF7171M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7171M transistor as follows.

IRF7171M Transistor Specification

Transistor Code		IRF7171M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	2.8W
Drain-Source Capacitance		970pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27nS
Gate-Threshold Voltage (Maximum)		3.6V
Total Gate Charge		36nC

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