IRF6612 MOSFET Transistor

The IRF6612 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF6612 transistor as follows.

IRF6612 Transistor Specification

Transistor Code		IRF6612
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0033Ohm
Power Dissipation (Maximum)	PD	2.8W
Total Gate Charge		30nC

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