IRF712 MOSFET Transistor

The IRF712 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF712 transistor as follows.

IRF712 Transistor Specification

Transistor Code		IRF712
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	400V
Drain Current (Maximum)	ID	1.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5Ohm
Power Dissipation (Maximum)	PD	36W
Operating Junction Temperature (Maximum)		150°C

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