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SPP07N60CFD MOSFET Transistor

The SPP07N60CFD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SPP07N60CFD transistor as follows.

Circuit diagram symbol of the SPP07N60CFD transistor

SPP07N60CFD Transistor Specification

Transistor Code SPP07N60CFD
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 600V
Drain Current (Maximum) ID 6.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.7Ohm
Power Dissipation (Maximum) PD 83W
Total Gate Charge 35nC

SPP07N60CFD MOSFET Transistor Overview

The SPP07N60CFD is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO220 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the SPP07N60CFD MOSFET

Followings are the key electrical characteristics of the SPP07N60CFD MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in SPP07N60CFD MOSFET transistor is 600V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the SPP07N60CFD MOSFET transistor is 6.6A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of SPP07N60CFD MOSFET transistor when the transistor is fully turned on is 0.7 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the SPP07N60CFD MOSFET transistor can comfortably transfer into heat without breaking is 83W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the SPP07N60CFD MOSFET transistor is switched on is . This is the rate at which SPP07N60CFD MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the SPP07N60CFD MOSFET transistor. You can download the official SPP07N60CFD MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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