IRF7103Q MOSFET Transistor

The IRF7103Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7103Q transistor as follows.

IRF7103Q Transistor Specification

Transistor Code		IRF7103Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.13Ohm
Power Dissipation (Maximum)	PD	2.4W

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