IRF1902 MOSFET Transistor

The IRF1902 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF1902 transistor as follows.

IRF1902 Transistor Specification

Transistor Code		IRF1902
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	2.5W

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