IRF610LPBF MOSFET Transistor

The IRF610LPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF610LPBF transistor as follows.

IRF610LPBF Transistor Specification

Transistor Code		IRF610LPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	36W
Drain-Source Capacitance		53pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		8.2nC

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