IRFSL17N20DPBF MOSFET Transistor

The IRFSL17N20DPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL17N20DPBF transistor as follows.

IRFSL17N20DPBF Transistor Specification

Transistor Code		IRFSL17N20DPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		33nC

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