IRF4104L MOSFET Transistor

The IRF4104L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF4104L transistor as follows.

IRF4104L Transistor Specification

Transistor Code		IRF4104L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0055Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		660pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		130nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		68nC

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