IRF3808PBF MOSFET Transistor

The IRF3808PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3808PBF transistor as follows.

IRF3808PBF Transistor Specification

Transistor Code		IRF3808PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	140A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	330W
Drain-Source Capacitance		890pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		140nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		150nC

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