IRF3205PBF MOSFET Transistor

The IRF3205PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3205PBF transistor as follows.

IRF3205PBF Transistor Specification

Transistor Code		IRF3205PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		781pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		101nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		146nC

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