H07N60E MOSFET Transistor

The H07N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H07N60E transistor as follows.

H07N60E Transistor Specification

Transistor Code		H07N60E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS

UXPython is not the creator or an official representative of the H07N60E MOSFET transistor. You can download the official H07N60E MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

IRF2204 MOSFET Transistor F5023 MOSFET Transistor KHB9D0N50P1 MOSFET Transistor IRL3202PBF MOSFET Transistor AUIRF4905 MOSFET Transistor IRF737LC MOSFET Transistor IRL640 MOSFET Transistor BUK7507-55B MOSFET Transistor 2SK3433 MOSFET Transistor IRLB3036GPBF MOSFET Transistor 2SK1402A MOSFET Transistor 2SK3887-01 MOSFET Transistor 2SK3501-01 MOSFET Transistor HUF76145P3 MOSFET Transistor CS6N70_A8D MOSFET Transistor CS8N90_A8 MOSFET Transistor PHP20NQ20T MOSFET Transistor 2SK555 MOSFET Transistor AUIRFB4410 MOSFET Transistor BUK7510-100B MOSFET Transistor