IPW50R280CE MOSFET Transistor

The IPW50R280CE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPW50R280CE transistor as follows.

IPW50R280CE Transistor Specification

Transistor Code		IPW50R280CE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Transistor SMD Code		5R280CE
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.28Ohm
Power Dissipation (Maximum)	PD	92W
Drain-Source Capacitance		49pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.4nS
Gate-Threshold Voltage (Maximum)		3.5V

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