STW30NM60D MOSFET Transistor

The STW30NM60D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STW30NM60D transistor as follows.

STW30NM60D Transistor Specification

Transistor Code		STW30NM60D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Transistor SMD Code		W30NM60D
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.145Ohm
Power Dissipation (Maximum)	PD	312W
Drain-Source Capacitance		800pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		33nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		82nC

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