IPS060N03L MOSFET Transistor

The IPS060N03L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPS060N03L transistor as follows.

IPS060N03L Transistor Specification

Transistor Code		IPS060N03L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Transistor SMD Code		060N03L
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	56W
Drain-Source Capacitance		640pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		3nS
Gate-Threshold Voltage (Maximum)		2.2V

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