SSM3310GJ MOSFET Transistor

The SSM3310GJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM3310GJ transistor as follows.

SSM3310GJ Transistor Specification

Transistor Code		SSM3310GJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.15Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		0.5V
Total Gate Charge		6nC

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