IPI100N06S3L-04 MOSFET Transistor

The IPI100N06S3L-04 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPI100N06S3L-04 transistor as follows.

IPI100N06S3L-04 Transistor Specification

Transistor Code		IPI100N06S3L-04
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Transistor SMD Code		3PN06L04
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0035Ohm
Power Dissipation (Maximum)	PD	214W
Drain-Source Capacitance		2165pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		58nS
Gate-Threshold Voltage (Maximum)		2.2V
Total Gate Charge		362nC

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