IPDH6N03LAG MOSFET Transistor

The IPDH6N03LAG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPDH6N03LAG transistor as follows.

IPDH6N03LAG Transistor Specification

Transistor Code		IPDH6N03LAG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		H6N03LA
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	71W
Drain-Source Capacitance		690pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		5.4nS
Gate-Threshold Voltage (Maximum)		2V

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