IPD60R380E6 MOSFET Transistor

The IPD60R380E6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD60R380E6 transistor as follows.

IPD60R380E6 Transistor Specification

Transistor Code		IPD60R380E6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		6R380E6
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.38Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		46pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		3.5V

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