IPD60R2K1CE MOSFET Transistor

The IPD60R2K1CE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD60R2K1CE transistor as follows.

IPD60R2K1CE Transistor Specification

Transistor Code		IPD60R2K1CE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		6R2K1CE
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.1Ohm
Power Dissipation (Maximum)	PD	22W
Drain-Source Capacitance		12pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		3.5V

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