AFN2014 MOSFET Transistor

The AFN2014 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN2014 transistor as follows.

AFN2014 Transistor Specification

Transistor Code		AFN2014
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		2014
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		285pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		13nC

UXPython is not the creator or an official representative of the AFN2014 MOSFET transistor. You can download the official AFN2014 MOSFET transistor datasheet to get more infromation about this transistor.

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