IPD06N03LBG MOSFET Transistor

The IPD06N03LBG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD06N03LBG transistor as follows.

IPD06N03LBG Transistor Specification

Transistor Code		IPD06N03LBG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		06N03LB
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0061Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		750pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		2V

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