AFP3679S MOSFET Transistor

The AFP3679S is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFP3679S transistor as follows.

AFP3679S Transistor Specification

Transistor Code		AFP3679S
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Transistor SMD Code		3679S
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		495pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		55nC

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