IPB12CNE8NG MOSFET Transistor

The IPB12CNE8NG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB12CNE8NG transistor as follows.

IPB12CNE8NG Transistor Specification

Transistor Code		IPB12CNE8NG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	85V
Drain Current (Maximum)	ID	67A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0129Ohm
Power Dissipation (Maximum)	PD	125W

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