IPB108N15N3G MOSFET Transistor

The IPB108N15N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB108N15N3G transistor as follows.

IPB108N15N3G Transistor Specification

Transistor Code		IPB108N15N3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	150V
Drain Current (Maximum)	ID	83A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0108Ohm
Power Dissipation (Maximum)	PD	214W
Total Gate Charge		41nC

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