IPB107N20N3G MOSFET Transistor

The IPB107N20N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB107N20N3G transistor as follows.

IPB107N20N3G Transistor Specification

Transistor Code		IPB107N20N3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	88A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0107Ohm
Power Dissipation (Maximum)	PD	300W
Total Gate Charge		65nC

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