IPB05CN10NG MOSFET Transistor

The IPB05CN10NG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB05CN10NG transistor as follows.

IPB05CN10NG Transistor Specification

Transistor Code		IPB05CN10NG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0054Ohm
Power Dissipation (Maximum)	PD	300W

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