IPB09N03LA MOSFET Transistor

The IPB09N03LA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB09N03LA transistor as follows.

IPB09N03LA Transistor Specification

Transistor Code		IPB09N03LA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		09N03LA
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0089Ohm
Power Dissipation (Maximum)	PD	63W
Drain-Source Capacitance		530pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		88nS
Gate-Threshold Voltage (Maximum)		2V

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