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AM110P08-11B MOSFET Transistor

The AM110P08-11B is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AM110P08-11B transistor as follows.

Circuit diagram symbol of the AM110P08-11B transistor

AM110P08-11B Transistor Specification

Transistor Code AM110P08-11B
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 80V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 110A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0112Ohm
Power Dissipation (Maximum) PD 300W
Drain-Source Capacitance 966pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 73nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 168nC

AM110P08-11B MOSFET Transistor Overview

The AM110P08-11B is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a TO-263 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the AM110P08-11B MOSFET

Followings are the key electrical characteristics of the AM110P08-11B MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in AM110P08-11B MOSFET transistor is 80V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the AM110P08-11B MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the AM110P08-11B MOSFET transistor is 110A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of AM110P08-11B MOSFET transistor when the transistor is fully turned on is 0.0112 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the AM110P08-11B MOSFET transistor can comfortably transfer into heat without breaking is 300W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the AM110P08-11B MOSFET transistor is 966pF. This value influences to the switching speed of the AM110P08-11B MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the AM110P08-11B MOSFET transistor is switched on is 73nS. This is the rate at which AM110P08-11B MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the AM110P08-11B MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of AM110P08-11B MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

UXPython is not the creator or an official representative of the AM110P08-11B MOSFET transistor. You can download the official AM110P08-11B MOSFET transistor datasheet to get more infromation about this transistor.

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