IPB26CN10NG MOSFET Transistor

The IPB26CN10NG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB26CN10NG transistor as follows.

IPB26CN10NG Transistor Specification

Transistor Code		IPB26CN10NG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK_TO263
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	71W
Total Gate Charge		23nC

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