IPB065N10N3G MOSFET Transistor

The IPB065N10N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB065N10N3G transistor as follows.

IPB065N10N3G Transistor Specification

Transistor Code		IPB065N10N3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		065N10N
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		646pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		37nS
Gate-Threshold Voltage (Maximum)		3.5V

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