IPB042N10N3GE8187 MOSFET Transistor

The IPB042N10N3GE8187 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPB042N10N3GE8187 transistor as follows.

IPB042N10N3GE8187 Transistor Specification

Transistor Code		IPB042N10N3GE8187
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Transistor SMD Code		042N10N
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0042Ohm
Power Dissipation (Maximum)	PD	214W
Drain-Source Capacitance		1210pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		59nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		117nC

UXPython is not the creator or an official representative of the IPB042N10N3GE8187 MOSFET transistor. You can download the official IPB042N10N3GE8187 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

IRF2903ZSPBF MOSFET Transistor AOB240L MOSFET Transistor SIHFBC40S MOSFET Transistor SIHF630S MOSFET Transistor IRFZ48S MOSFET Transistor SUB85N10-10 MOSFET Transistor IXTA4N65X2 MOSFET Transistor KQB5N60 MOSFET Transistor IRFS7787PBF MOSFET Transistor AM110P06-06B MOSFET Transistor SUM110N04-05H MOSFET Transistor SUM50N06-16L MOSFET Transistor SIHB20N50E MOSFET Transistor IRF4905SPBF MOSFET Transistor IXTA4N150HV MOSFET Transistor IPB03N03LBG MOSFET Transistor RU3710S MOSFET Transistor IRF2204SPBF MOSFET Transistor IXTA3N150HV MOSFET Transistor AOB11N60 MOSFET Transistor