SUB85N10-10 MOSFET Transistor

The SUB85N10-10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SUB85N10-10 transistor as follows.

SUB85N10-10 Transistor Specification

Transistor Code		SUB85N10-10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	85A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0105Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		665pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		90nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		105nC

UXPython is not the creator or an official representative of the SUB85N10-10 MOSFET transistor. You can download the official SUB85N10-10 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

RU6099S MOSFET Transistor IRF540SPBF MOSFET Transistor SUM110N05-06L MOSFET Transistor KDB3632 MOSFET Transistor SIHFBC40S MOSFET Transistor AP9971AGS MOSFET Transistor SIHFZ44S MOSFET Transistor KDB4020P MOSFET Transistor IRF9Z34SPBF MOSFET Transistor SUM110N04-03P MOSFET Transistor IRF3711SPBF MOSFET Transistor KDB2670 MOSFET Transistor IRF2805SPBF MOSFET Transistor IRFZ44VZSPBF MOSFET Transistor SUB65P04-15 MOSFET Transistor SIHF830AS MOSFET Transistor FDB2570 MOSFET Transistor IRFS4321PBF MOSFET Transistor SUM36N20-54P MOSFET Transistor AOB2904 MOSFET Transistor