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HUFA75639P3 MOSFET Transistor

The HUFA75639P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HUFA75639P3 transistor as follows.

Circuit diagram symbol of the HUFA75639P3 transistor

HUFA75639P3 Transistor Specification

Transistor Code HUFA75639P3
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Transistor SMD Code 75639P
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 56A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.025Ohm
Power Dissipation (Maximum) PD 200W
Drain-Source Capacitance 500pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 60nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 110nC

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