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HFD2N60 MOSFET Transistor

The HFD2N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFD2N60 transistor as follows.

Circuit diagram symbol of the HFD2N60 transistor

HFD2N60 Transistor Specification

Transistor Code HFD2N60
Transistor Type MOSFET
Control Channel Type N-Channel
Package D-PAK
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 5Ohm
Power Dissipation (Maximum) PD 44W
Drain-Source Capacitance 40pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 9nC

UXPython is not the creator or an official representative of the HFD2N60 MOSFET transistor. You can download the official HFD2N60 MOSFET transistor datasheet to get more infromation about this transistor.

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