FQD19N10TF MOSFET Transistor

The FQD19N10TF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD19N10TF transistor as follows.

FQD19N10TF Transistor Specification

Transistor Code		FQD19N10TF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	15.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		165pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		150nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		19nC

UXPython is not the creator or an official representative of the FQD19N10TF MOSFET transistor. You can download the official FQD19N10TF MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQD17N08LTM MOSFET Transistor HFD2N90 MOSFET Transistor HFD5N65U MOSFET Transistor HFD2N60U MOSFET Transistor FQD30N06TM MOSFET Transistor HFD1N65S MOSFET Transistor HFD5N50U MOSFET Transistor FDD86367_F085 MOSFET Transistor FQD17N08LTF MOSFET Transistor FQD10N20TF MOSFET Transistor HFD4N50 MOSFET Transistor FQD3N40TM MOSFET Transistor FQD1N60CTM MOSFET Transistor FDD6512A MOSFET Transistor FQD5N40TM MOSFET Transistor FQD30N06TF MOSFET Transistor FQD3N60TM MOSFET Transistor FQD2N50TM MOSFET Transistor FQD5N30TF MOSFET Transistor SSR1N60B MOSFET Transistor