H5N2008P MOSFET Transistor

The H5N2008P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H5N2008P transistor as follows.

H5N2008P Transistor Specification

Transistor Code		H5N2008P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	96A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	150W
Total Gate Charge		98nC

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