FQPF8P10 MOSFET Transistor

The FQPF8P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF8P10 transistor as follows.

FQPF8P10 Transistor Specification

Transistor Code		FQPF8P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.53Ohm
Power Dissipation (Maximum)	PD	28W
Drain-Source Capacitance		120pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		110nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		12nC

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