FQPF50N06L MOSFET Transistor

The FQPF50N06L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF50N06L transistor as follows.

FQPF50N06L Transistor Specification

Transistor Code		FQPF50N06L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	32.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.021Ohm
Power Dissipation (Maximum)	PD	47W
Drain-Source Capacitance		445pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		380nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		24.5nC

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