FQP15P12 MOSFET Transistor

The FQP15P12 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP15P12 transistor as follows.

FQP15P12 Transistor Specification

Transistor Code		FQP15P12
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	120V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	100W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		38nC

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